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于乃森

基本信息

姓名:于乃森

职称:教授

联系电话:0411-87404586

电子邮箱:yunaisen@dlnu.edu.cn

u=347692198,1928494576&fm=15&gp=0

教育经历

中国科学院物理所,凝聚态物理国家实验室,博士

山东大学,晶体材料国家重点实验室,硕士

济南大学,材料科学与工程学院,学士

工作经历

2007.07-至今,大连民族大学,教授

2008.11-2011.10,中科院物理研究所,博士后

研究领域

半导体纳米材料,光电探测器

荣誉

2018年,辽宁省“兴辽英才计划”青年拔尖人才

2016年,辽宁省“百千万人才工程”千人层次人选

2016年,国家民委中青年英才

2015年,辽宁省高等学校优秀科技人才

2012年,辽宁省高等学校杰出青年学者

奖励

2015年,大连市优秀自然科技论文奖一等奖

2013年,大连市优秀自然科技论文奖一等奖

科研项目

1. 国家自然科学基金面上项目,11474045,氮化镓基材料表面水溶液异质生长纳米氧化锌材料的研究,

    2015.01—2018.12,90万元.

2. 国家自然科学基金青年基金项目,51102036,基于多模式原子力显微镜研究大功率氮化镓基发光二极管失效机制,

    2012.01-2014.12,25万元

3. 辽宁省自然科学基金项目,21602202,III族氮化物表面生长氧化锌材料及其器件特性研究,

    2016.07-2018.06 ,6万元

代表论文

1.Yong Wang, Naisen Yu*, Fabrication Visible-blind Ultraviolet Photodetector Based on ZnSGaN Heterostructure with Fast Response, Materials Express. 2020

2. Naisen Yu, Haiou Li, Yunfeng Wu, Facile Assembly of Single α-MoO3 Microbelt/β-Ni(OH)2 Heterojunctions Ultraviolet-visible Detector with Fast Switching Characteristics. Applied Nanoscience, 2020

3. Bang Liu, Naisen Yu, Dedi Liu, Benkang Liu, Yunfeng Wu, Yan Qi, High Performance p-GaN/Oxide Layer/n-GaN Ultraviolet Detector Fabricated by Directly Contacting Method. Journal of Nanoscience and Nanotechnology 2020

4. Yunfeng Wu, Naisen Yu, Ultraviolet photodetector composed of ZnO nanosheets/Cu2O heterostructure fabricated by hydrothermal process. Journal of Optoelectronics and Advanced Materials. 21(2019)651.

5. Wensi Zhang, Naisen Yu, Haiou Li,Yan Qi, Ultraviolet Photoconductive Detector Based on MgO/a-GaN Heterostructure Grown by Aqueous Method.Journal of Nanoscience and Nanotechnology.20(2020)2460.

6. Yong Wang, Naisen Yu*, Fabrication of NiO/AlGaN heterojunction UV photodetector by lowtemperature aqueous method. Materials Research Express.6 (2019) 1250b7.

7. Sitong Liu, Naisen Yu*, Yunfeng Wu, Fabrication of Branched Flower-Like ZnO/Si Hierarchical Heterostructure UV Detector by Aqueous Method.Journal of Nanoscience and Nanotechnology 2020

8. Juan Liu, Naisen Yu*, Yan Qi, Haiyan Zhao, Qing Yuan, Liwei Cao, Facile fabrication of p-Cu2O/n-ZnO nanorods arrays heterojunction ultraviolet sensor by aqueous method, Materials Research Express,2019, 6(1) 015012. 

9. Yun Xiang, Naisen Yu*,Juan Liu, Liwei Cao, Simple fabrication of ZnO nanosheets/p-GaN heterostructure and ultraviolet detection, Physica E: Low-dimensional Systems and Nanostructures ,2018,102,29-32. 

10. Yan Peng,Naisen Yu*, Yun Xiang, Juan Liu, Liwei Cao, Shaoying Huang, One-Step Hydrothemal Synthesis of Nitrogen Doped beta-Ga2O3 Nanostructure and Its Optical Properties,Journal of Nanoscience and Nanotechnology, 2018,18,5654-5659.

11. Shaoying Huang, Naisen Yu*, Tiyun Wang, Jinpeng Li,Simple fabrication of UV photo-detector based on NiO/ZnO structure grown by hydrothermal process,Functional Materials Letters,2018,11, 1850045.

12. Naisen Yu*, Dapeng Dong, Yan Qi, Rui Yang, Jing Gui, Investigate on Structure and Optical Properties of ZnO Nanostructures Grown on a-GaN/r-Sapphire,Journal of Nanoscience and Nanotechnology, 2018,18,2072-2074.

13.Naisen Yu*, Dapeng Dong, Yan Qi, Rui Yang, Jing Gui, Investigate on Structure and Optical Properties of ZnO Nanostructures Grown on a-GaN/r-Sapphire,Journal of Nanoscience and Nanotechnology, 2018,18,2072-2074.

14. Naisen Yu*, Ximeng Dong, Jing Gui, Han Yan, Yucheng Zhao, Simple fabricate ZnO individual microwall UV detector grown along the cracks of GaN/Si by the aqueous method, Optics communications, 2017,383, 177-181.

15. Naisen Yu*, Dapeng Dong, Yan Qi, Yunfeng Wu, Lu Chen, Ultraviolet Photoconductive Detectors Based on A-Plane ZnO Film Grow by Hydrothermal Method, Journal of Electronic Materials, 2016,45(2),1073-1076.

16. Naisen Yu*, Dapeng Dong, Rui Yang, Lu Chen, Yuyanyao Yang,Low-Temperature Growth of Nanocrystalline CuO Thin Films on Si by Aqueous Method, Journal of Nanoscience and Nanotechnology, 2016,11 (5),603-606.

17. Naisen Yu*, Dapeng Dong, Yan Qi, Rui Yang,Synthesis of hexagonal ZnO microdisk on InN substrate by aqueous method and its optical properties, Journal of Materials Science: Materials in Electronics, 2016,27(10),10468-10472.